Illumination system having a beam deflection array for illuminating a mask in a microlithographic projection exposure apparatus

ABSTRACT

An illumination system for illuminating a mask in a scanning microlithographic projection exposure apparatus has an objective with an object plane, at least one pupil surface and an image plane in which a mask can be arranged. A beam deflection array of reflective or transparent beam deflection elements is provided, where each beam deflection element is adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal. The beam deflection elements are arranged in or in close proximity to the object plane of the objective.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of, and claims benefit under 35 USC120 to, U.S. application Ser. No. 12/711,059, filed Feb. 23, 2010, whichis a continuation of, and claims benefit under 35 USC 120 to,international application PCT/EP2007/007576, filed Aug. 30, 2007. U.S.application Ser. No. 12/711,059 and international applicationPCT/EP2007/007576 are hereby incorporated by reference in theirentirety.

FIELD

The disclosure generally relates to illumination systems forilluminating a mask in a microlithographic projection exposureapparatus. More particularly, the disclosure relates to such systemsincluding an array of reflecting elements, which may be realized as amicroelectro-mechanical system (MEMS).

BACKGROUND

Microlithography (also called photolithography or simply lithography) isa technology for the fabrication of integrated circuits, liquid crystaldisplays and other microstructured devices. More particularly, theprocess of microlithography, in conjunction with the process of etching,is used to pattern features in thin film stacks that have been formed ona substrate, for example a silicon wafer. At each layer of thefabrication, the wafer is first coated with a photoresist which is amaterial that is sensitive to radiation, such as deep ultraviolet (DUV)light. Next, the wafer with the photoresist on top is exposed toprojection light in a projection exposure apparatus. The apparatusprojects a mask containing a pattern onto the photoresist so that thelatter is only exposed at certain locations which are determined by themask pattern. After the exposure the photoresist is developed to producean image corresponding to the mask pattern. Then an etch processtransfers the pattern into the thin film stacks on the wafer. Finally,the photoresist is removed. Repetition of this process with differentmasks results in a multi-layered microstructured component.

A projection exposure apparatus typically includes an illuminationsystem for illuminating the mask, a mask stage for a aligning the mask,a projection objective and a wafer alignment stage for aligning thewafer coated with the photoresist. The illumination system illuminates afield on the mask that may have the shape of an elongated rectangularslit, for example.

In current projection exposure apparatus a distinction can be madebetween two different types of apparatus. In one type each targetportion on the wafer is irradiated by exposing the entire mask patternonto the target portion in one go. Such an apparatus is commonlyreferred to as a wafer stepper. In the other type of apparatus, which iscommonly referred to as a step-and-scan apparatus or scanner, eachtarget portion is irradiated by progressively scanning the mask patternunder the projection beam in a given reference direction whilesynchronously scanning the substrate table parallel or anti-parallel tothis direction. The ratio of the velocity of the wafer and the velocityof the mask is equal to the magnification of the projection objective,which is usually smaller than 1, for example 1:4.

It is to be understood that the term “mask” (or reticle) is to beinterpreted broadly as a patterning device. Commonly used masks containtransparent or reflective patterns and may be of the binary, alternatingphase-shift, attenuated phase-shift or various hybrid mask type, forexample. However, there are also active masks, e.g. masks realized as aprogrammable mirror array. An example of such a device is amatrix-addressable surface having a viscoelastic control layer and areflective surface. More information on such mirror arrays can begleaned, for example, from U.S. Pat. No. 5,296,891, U.S. Pat. No.5,523,193, U.S. Pat. No. 6,285,488 B1, U.S. Pat. No. 6,515,257 B1 and WO2005/096098 A2. Also programmable LCD arrays may be used as activemasks, as is described in U.S. Pat. No. 5,229,872. For the sake ofsimplicity, the rest of this text may specifically relate to apparatusincluding a mask and a mask stage. However, the general principlesdiscussed in such apparatus should be seen in the broader context of thepatterning device as hereabove set forth.

As the technology for manufacturing microstructured devices advances,there are ever increasing demands also on the illumination system.Ideally, the illumination system illuminates each point of theilluminated field on the mask with projection light having a welldefined irradiance and angular distribution. The term angulardistribution describes how the total light energy of a light bundle,which converges towards a particular point in the mask plane, isdistributed among the various directions along which the raysconstituting the light bundle propagate. Frequently the angulardistribution in the mask plane is simply referred to as illuminationsetting.

The angular distribution of the projection light impinging on the maskis usually adapted to the kind of pattern to be projected onto thephotoresist. For example, relatively large sized features may involve adifferent angular distribution than small sized features. The mostcommonly used angular distributions of projection light are referred toas conventional, annular, dipole and quadrupole illumination settings.These terms refer to the irradiance distribution in a pupil surface ofthe illumination system. With an annular illumination setting, forexample, only an annular region is illuminated in the pupil surface.Thus there is only a small range of angles present in the angulardistribution of the projection light, and thus all light rays impingeobliquely with similar angles onto the mask.

Different approaches are known in the art to modify the angulardistribution of the projection light in the mask plane so as to achievethe desired illumination setting. In the simplest case an aperture stop(diaphragm) including one or more apertures is positioned in a pupilsurface of the illumination system. Since locations in a pupil surfacetranslate into angles in a Fourier related field plane such as the maskplane, the size, shape and location of the aperture(s) in the pupilsurface determines the angular distributions in the mask plane. However,any change of the illumination setting involves a replacement of thestop. This can make it difficult to finally adjust the illuminationsetting, because this would involve a very large number of stops thathave aperture(s) with slightly different sizes, shapes or locations.Apart from that, such a stop can absorb a very significant amount oflight. This can reduce the throughput of the entire projection exposureapparatus.

Many common illumination systems therefore include adjustable elementsthat make it possible, at least to a certain extent, to continuouslyvary the illumination of the pupil surface. Conventionally, a zoomaxicon system including a zoom objective and a pair of axicon elementsare used for this purpose. An axicon element is a refractive lens thathas a conical surface on one side and is usually plane on the oppositeside. By providing a pair of such elements, one having a convex conicalsurface and the other a complementary concave conical surface, it ispossible to radially shift light energy. The shift is a function of thedistance between the axicon elements. The zoom objective makes itpossible to alter the size of the illuminated area in the pupil surface.

However, with such a zoom axicon system only conventional and annularillumination settings can typically be produced. For other illuminationsettings, for example dipole or quadrupole illumination settings,additional stops or optical raster elements are often involved. Anoptical raster element produces, for each point on its surface, anangular distribution which corresponds in the far field to certainilluminated areas. Often such optical raster elements are realized asdiffractive optical elements, and in particular as computer generatedholograms (CGH). By positioning such an element in front of the pupilsurface, optionally with an additional condenser lens in between, it ispossible to produce almost any arbitrary intensity distribution in thepupil surface. An additional zoom-axicon system may be used to vary, toa limited extent, the illumination distribution produced by the opticalraster element in the pupil surface.

However, the zoom axicon system typically provides only limitedadjustability of the illumination setting. For example, it is generallynot possible to dislocate only one of the four poles of a quadrupoleillumination setting along an arbitrary direction. To this end anotheroptical raster element often has to be used that is specificallydesigned for this particular intensity distribution in the pupilsurface. The design, production and shipping of such optical rasterelements can be a time consuming and costly process, and thus there isoften little flexibility to adapt the light intensity distribution inthe pupil surface to the needs of the operator of the projectionexposure apparatus.

For increasing the flexibility in producing different angulardistribution in the mask plane, it has been proposed to use mirrorarrays that illuminate the pupil surface.

In EP 1 262 836 A1 such a mirror array is realized as amicro-electromechanical system (MEMS) including more than 1000microscopic mirrors. Similar illumination systems are known from otherpatent documents, such as US 2006/0087634 A1 and U.S. Pat. No. 7,061,582B2.

WO 2005/026843 A2 discloses an illumination system in which adiffractive optical element is arranged in the beam path between amirror array and a pupil surface of the illumination system. An opticalintegrator such as a fly's eye lens or a quartz rod is arranged betweenthe mirror array and the mask. The optical integrator ensures ahomogenous illumination of the mask and also defines at leastapproximately the geometry of the illuminated field.

SUMMARY

In some embodiments, the disclosure provides an illumination system forilluminating a mask in a microlithographic projection exposureapparatus. The illumination system enables an operator of the projectionexposure apparatus to set a wide variety of different illuminationsettings, but with a reduced system complexity.

In certain embodiments, the disclosure provides an illumination systemincluding an objective having an object plane, at least one pupilsurface and an image plane in which the mask can be arranged. Theillumination system further includes a beam deflection array ofreflective or transparent beam deflection elements. Each beam deflectionelement is adapted to deflect an impinging light ray by a deflectionangle that is variable in response to a control signal. The beamdeflection elements are arranged in or in close proximity to the objectplane of the objective.

The beam deflection array “directly”, i.e. without an intermediateoptical integrator positioned in or in close proximity to a pupilsurface, illuminates the mask. The angular distribution of lightimpinging on a particular point on the mask therefore depends mainly onthe deflection angle by which an impinging light ray is deflected by therespective beam deflection element. Consequently, at a given time duringthe scanning operation, each point on the mask is illuminated only bylight having a very restricted angular distribution. However, during thescan operation each point on the mask is illuminated by a plurality ofdifferent beam deflection elements that may produce a wide variety ofdifferent angular distributions. The resulting angular distributionafter completion of the scanning operation is therefore obtained byintegrating the angular distributions produced by the individual beamdeflection elements. Thus, the illumination system makes it evenpossible to produce field dependent angular distributions, i.e.different points on the mask may be illuminated with different angulardistributions.

The illumination system may have a very simple overall construction,because it involves, as indispensable components, only the objectivethat conjugates the beam deflection array with the mask plane.

A field defining raster element may be arranged between a light sourceof the illumination system and the beam deflection array. The fielddefining raster element produces a two dimensional far field intensitydistribution which at least partially determines the shape of a fieldwhich is illuminated on the beam deflection array and thus, as a resultof the optical conjugation between the plane of the beam deflectionarray and the mask plane, also on the mask. A condenser may be arrangedbetween the field defining raster element and the beam deflection arrayso as to improve the system performance and reduce the overall length ofthe illumination system.

The angular distribution of the light impinging on the mask isdetermined by the deflection angles associated with each beam deflectionelement. In order to further increase the variability of manipulatingthe angular distribution, an additional pupil defining raster elementarranged in a field plane, which is optically conjugated to the imageplane of the objective, may be provided. This field plane may be theobject plane of the objective, an intermediate image plane of theobjective or a field plane which is ahead of the objective. In thelatter case an additional optical system is involved that conjugatesthis field plane to the object plane of the objective.

The pupil defining raster element may include arrays of microlenses ordiffractive structures. In the latter case it is even possible to formthe pupil defining raster element directly on the surface of the beamdeflection elements.

If a pupil defining raster element is used, the two-dimensional farfield intensity distribution in the pupil surface of the objective is aconvolution of the far field intensity distribution produced by the beamdeflection array and the far field intensity distribution produced bythe pupil defining raster element.

Each beam deflection element may be adapted to be either in an“on”-state or in an “off”-state, wherein the “on”-state is determinedsuch that a deflected light beam passes the pupil surface. The“off”-state is determined such that a deflected light does not pass thepupil surface. With such a configuration of the beam deflection elementsit is possible to adjust the illumination dose, i.e. the total lightenergy received by a particular point on the mask after completion ofthe scanning operation, by simply switching on and off one or more ofthe beam deflection elements that contribute to the illumination of thatparticular point on the mask.

In order to achieve sharp edges of the illuminated field of the maskalong at least one direction, a field stop may be provided. The fieldstop may be arranged in or in immediate vicinity to the object plane orany other plane which is conjugated thereto, for example an intermediateimage plane of the objective.

Because the beam deflection elements are inevitably separated by gaps,no light will impinge on the mask where images of these gaps are formed.Therefore measures have to be taken that ensure a uniform illuminationof the mask. One measure is to stagger the beam deflection elements sothat at least one beam deflection element is illuminated on anyarbitrary line which extends parallel to the scan direction betweenopposite ends of the beam deflection array. It is then ensured thatthere are no points on the mask which do not receive any light at allduring the scan operation. Ideally, the gaps are evenly distributedperpendicularly to the scan direction so that all points on the mask“see” the same number of gaps during the scanning operation.

Another measure is to use a field stop which has a stop edge thatextends at least substantially along an X direction which isperpendicular to the scanning direction. The edge has indentations,wherein each indentation corresponds to a gap between adjacent beamdeflection elements. The indentations increase the light dose impingingon the mask at the conjugated points and may thus compensate for theeffect of the gaps. Such a field stop may be configured with a stop edgethat is formed by a plurality of blades, wherein the shape and/or theposition of at least some of the blades is adjustable with the help of amanipulator.

A still further measure to improve the illumination uniformity is toarrange the beam deflecting elements at a distance A with |A|>A_(min)from the object plane, wherein A_(min) is the shortest distance from theobject plane at which a usable field in the object plane can becompletely illuminated by the deflecting elements. On the other hand,the beam deflection elements should not be arranged to far away from theobject plane. Optionally, |A|<A_(max), wherein the distance A_(max) isthe shortest distance from the object plane at which two light bundlesemerging from opposite edges of a deflection element intersect.

The beam deflection elements may be transparent elements that deflectlight rays passing through the transparent elements. Such transparentelements may be realized as electro-optical or acousto-optical elements.Optionally, however, the deflection elements are mirrors that can betilted relative to the object plane.

In order to reduce distortions that are caused by obliquely illuminatingthe beam deflection array, the object plane and the image may beinclined to each other. In this case the optical axis of the objectiveshould be inclined both with respect to a normal on the object plane andto a normal on the image plane. This is, qualitatively speaking, theessence of what is usually referred to as Scheimpflug condition.

BRIEF DESCRIPTION OF THE DRAWINGS

Various features and advantages of the disclosure may be more readilyunderstood with reference to the following detailed description taken inconjunction with the accompanying drawing in which:

FIG. 1 is a perspective and considerably simplified view of a projectionexposure apparatus;

FIG. 2 is a meridional section through an illumination system containedin the projection exposure apparatus shown in FIG. 1;

FIG. 3 is a perspective view of a mirror array contained in theillumination system of FIG. 2;

FIG. 4 is a cross-section through the mirror array of FIG. 3;

FIG. 5 is a top view on a pupil plane contained in the objective of theillumination system shown in FIG. 2;

FIG. 6 is a schematic illustration of the mirror array (or of its imageon the mask) for a dipole illumination setting;

FIG. 7 is an illustration similar to FIG. 6, but for an annularillumination setting;

FIG. 8 is a simplified meridional section through an illumination systemaccording to another exemplary embodiment, in which the object plane andthe image plane of the objective are not parallel;

FIG. 9 is a meridional section through an objective of the illuminationsystem that illustrates the imaging of the gaps formed between adjacentmirror elements on the mask;

FIG. 10 is a schematic top view on an adjustable field stop;

FIG. 11 shows two mirror elements in a cross section that are arrangedoutside an object plane of an objective;

FIG. 12 is an illustration similar to FIG. 11, but with a largerdistance between the object plane of the objective and the mirrorelements;

FIG. 13 is a meridional section through an illumination system accordingto a further exemplary embodiment of the disclosure in which a fieldstop is arranged in an intermediate image plane;

FIG. 14 is a meridional section through an illumination system accordingto still another exemplary embodiment in which an additional pupildefining element is provided;

FIG. 15 shows the intensity distribution obtained in the pupil plane ofthe objective as a result of the convolution of two far field intensitydistributions.

DETAILED DESCRIPTION 1. General Structure of Projection ExposureApparatus

FIG. 1 is a perspective and highly simplified view of a projectionexposure apparatus 10 that used in the manufacture of integratedcircuits and other microstructured components. The projection exposureapparatus includes an illumination system 12 containing a light sourcefor the generation of projection light, and illumination optics thattransforms the projection light into a projection light bundle havingcarefully defined properties. The projection light bundle illuminates afield 14 on a mask 16 containing minute structures 18. In this exemplaryembodiment, the illuminated field 14 has approximately the shape of aring segment. However, other, for example rectangular, shapes of theilluminated field 14 are contemplated as well.

A projection objective 20 images the structures 18 within theilluminated field 14 onto a light sensitive layer 22, for example aphotoresist, which is applied on a substrate 24. The substrate 24, whichmay formed by a silicon wafer, is arranged on a wafer stage (not shown)such that a top surface of the light sensitive layer 22 is preciselylocated in the image plane of the projection objective 20. The mask 16is positioned via a mask stage (not shown) in an object plane of theprojection objective 20. Since the projection objective 20 has amagnification of less than 1, for example 1:4, a reduced image 14′ ofthe structures 18 within the illuminated field 14 is formed on the lightsensitive layer 22.

2. Illumination System

FIG. 2 is a more detailed meridional section through an exemplaryembodiment of the illumination system 12 shown in FIG. 1. For the sakeof clarity, the illustration of FIG. 2 is considerably simplified andnot to scale. This particularly implies that different optical units arerepresented by very few optical elements only. In reality, these unitsmay include significantly more lenses and other optical elements.

The illumination system 12 includes a housing 28 and a light source thatis, in the exemplary embodiment shown, realized as an excimer laser 30.The excimer laser 30 emits projection light that has a wavelength ofabout 193 nm. Other types of light sources and other wavelengths, forexample 248 nm or 157 nm, are also contemplated.

In the exemplary embodiment shown, the projection light emitted by theexcimer laser 30 enters a beam expansion unit 32 in which the lightbundle is expanded without altering its geometrical optical flux. Thebeam expansion unit 32 may include several lenses as shown in FIG. 2, ormay be realized as a mirror arrangement. After passing through the beamexpansion unit 32, the projection light impinges on a field definingoptical raster element 34.

The field defining optical raster element 34 may be configured as anoptical integrator which produces a plurality of secondary lightsources. Typically, such optical integrators include one or moremicrolens arrays that produce a well defined angular distribution ifilluminated with a substantially collimated light beam. If the opticalintegrator includes at least two orthogonal arrays of cylindricalmicrolenses, it is possible to produce different angular distributionsalong the directions in which the microlenses extend. For furtherdetails reference is made to International application PCT/EP2007/001267which is assigned to the applicant.

Alternatively, the field defining optical raster element 34 may beconfigured as a diffractive optical element (DOE), for example acomputer generated hologram (CGH). Diffractive optical elements have theadvantage that almost any arbitrary angular distribution, and thusalmost any desired far field intensity distribution, may be generated.

Generally, the field defining optical raster element 34 may be embodiedby any optical element that increases the geometrical optical flux. Thismeans, more illustratively speaking, that any optical element issuitable that increases the divergence of any light bundle whichimpinges on an arbitrary surface area of the element.

The angular distribution produced by the field defining optical rasterelement 34 translates into a locally varying intensity distribution inthe far field. In the far field the distance, at which an intensitydistribution produced by an optical raster element is observed, is largein comparison to the typical width of the structures contained in theelement. In the case of diffractive optical elements, the far fieldintensity distribution depends on the Fourier transform of a complexfunction which describes the impact of the diffracting structurescontained in the diffractive optical element on the wavefront.

Mainly for reducing the longitudinal dimensions of the illuminationsystem 12, a condenser lens 36 is arranged behind the field definingoptical element 34. For the sake of simplicity, the condenser lens 36 isshown in FIG. 2 as a single lens. In real systems a lens system may beused instead that includes a plurality of individual lenses. Thecondenser lens 36 is arranged such that its front focal plane coincideswith a plane in which the field defining optical element 34 is arranged.

The condenser lens 36 transforms the diverging light bundle emergingfrom the field defining optical element 34 into a substantiallycollimated beam 38 having a spatial intensity distribution which isdetermined by the field defining optical element 34. If the divergenceintroduced by the field defining optical element 34 is different inorthogonal directions X and Y perpendicular to an optical axis OA, thecross-section of the collimated beam 38 emerging from the condenser lens36 may have the shape of a rectangular slit. The aspect ratio of theslit is determined by the divergence produced by the field definingoptical element 34 along the X and Y directions.

The collimated beam 38 impinges on a mirror array 40 which includes, inthe exemplary embodiment shown, a plurality of rectangular mirrorelements M_(ij). FIG. 3, which is a perspective view of the mirror array40, illustrates how the mirror elements M_(ij) form a rectangularreflective surface which is only interrupted by narrow gaps betweenadjacent mirror elements M_(ij). Each individual mirror element M_(ij)can be tilted independently from each other by two tilt axes that can bealigned perpendicularly to each other. In FIG. 3 the tilt axes areindicated by broken lines 42, 44 for a single mirror element M₃₅. Bytilting the individual mirror elements M_(ij), it is possible to directan impinging light ray into any arbitrary direction within a range ofdirections which is restricted by the tilting ranges of the mirrorelements M_(ij).

FIG. 4, which is a simplified side view of some of the mirror elementsM_(ij), illustrates how the collimated beam 38 is subdivided into aplurality of individual sub-beams by the mirror elements M_(ij), whereinthe sub-beams may be directed into various directions by tilting themirror elements M_(ij).

Two actuators (not shown) are connected to each individual mirrorelement M_(ij) for tilting it around the two orthogonal tilting axes 42,44. The actuators are connected to a control unit 46 which generatessuitable control signals for the actuators. The control unit 46therefore determines the tilting angles of the mirror elements M_(ij),and thus also the angles by which the mirror elements M_(ij) deflectimpinging light rays. The control unit 46 is connected to an overallsystem control 48 that coordinates the various operations of theprojection exposure apparatus 10.

The mirror array 40, or strictly speaking the reflective surfaces of themirror elements M_(ij), are arranged in or in close proximity to anobject plane 50 of an objective 52, which includes, in the simplifiedillustration of FIG. 2, two lenses 52 a and 52 b. The objective 52,which may have one or more intermediate image planes as will discussedbelow with reference to FIG. 12, has an image plane 54 which isoptically conjugated to the object plane 50. The image plane 54coincides with a mask plane in which the mask 16 is positioned duringthe exposure operation. The objective 52 has at least one pupil plane 60having a Fourier relationship with the adjacent field planes, here theoptical plane 50 and the image plane 54.

Since the mirror array 40 is arranged in or in close proximity to theobject plane 50 of the objective 52, an image of the mirror elementsM_(ij) is formed on the mask 16 in the image plane 54. Thus there is aone to one relationship between each point on a mirror element M_(ij)and a conjugated point in the image plane 54. This conjugation isillustrated in FIG. 2 by slightly diverging light bundles 62, 64 whichemerge from two points 62 a, 64 a on the mirror elements M_(ij) andconverge to conjugated image points 62 b, 64 b, respectively, located inthe image plane 54.

Since the mirror elements on which the object points 62 a, 64 a arelocated, have different tilting angles, the light bundles 62, 64intersect the pupil plane 60 at different locations. Consequently, theimage points 62 b, 64 b on the mask 16 are illuminated with differentangular distributions. In the configuration shown in FIG. 2, the lightbundles 62, 64 illuminate the image points 62 b, 64 b obliquely fromopposite directions.

For all object points on a particular mirror element M_(ij) the sameconsiderations apply correspondingly, at least as long as these objectpoints are illuminated in exactly the same manner by the collimated beam38. Thus all light reflected from a particular mirror element M_(ij)intersects the pupil plane 62 at the same spot. This also means that, ata given time, the angular distributions for all image points of theparticular mirror are substantially identical.

If all mirror elements M_(ij) have identical tilt angles, slightdeviations of the angular distributions may nevertheless be observed.This is because the collimated beam 38 illuminates the mirror array 40obliquely, and thus the object points are not illuminated exactly in thesame manner. To avoid such deviations, the field defining opticalelement 34 may be modified such that exactly the same illuminationconditions prevail on all mirror elements M_(ij).

In the configuration shown in FIG. 2 it is assumed that the mirrorelements M_(ij) are tilted such that all light bundles reflected fromthe mirror elements M_(ij) pass through the same circular areas in thepupil plane 60, as it is shown in the schematic illustration of FIG. 5.

The two areas, which are referred to in the following as poles P₁ andP₂, are arranged along the Y direction with mirror-symmetry with respectto the X-Z plane. Such an illumination of the pupil plane characterizesa dipole illumination setting, which is particularly useful for imagingstructures that are aligned along the X direction. The diameter of thepoles P₁, P₂ is determined by a residual divergence of the beam 38 whichimpinges on the mirror array 40. This residual divergence may beproduced by the light source 30 and the field defining optical element34.

For illuminating only the poles P₁ and P₂ in the pupil plane 60, each orat least some of the mirror elements M_(ij) have to be individuallycontrolled by the control unit 46. The control unit 46 ensures, for eachmirror element M_(ij), that the portion of the collimated beam 38impinging the respective mirror element M_(ij) is reflected such that itpasses the poles P₁, P₂ in the pupil plane 60. Usually this will involvethat all mirror elements M_(ij) have different tilting angles. Thecontrol unit 46 may contain a look-up table in which, for a particularillumination setting, the tilting angles for all mirror elements M_(ij)are stored. The selection of the illumination setting is usuallyperformed manually at the system control 48, taking into account thespecific configuration of the structures contained in the mask 16 to beprojected.

It should be noted, however, that at a given time each particular imagepoint on the mask 16 is illuminated only by the light bundle whichemerges from the conjugated object point on one of the mirror elementsM_(ij) of the mirror array 40. In the case of a dipole illuminationsetting, this implies that, at a given time during the scan operation ofthe projection exposure apparatus 10, each point on the mask 16 iseither illuminated by light passing through pole P₁ or by light passingthrough pole P₂.

As a result of the scanning operation, the mask 16 is moved through theilluminated field along the scan direction Y. Thus the exposure of aparticular point on the mask 16 is obtained by integrating thecontributions from all object points in the illuminated field alongwhich the particular point on the mask 16 passes. If the point on themask is illuminated from one side (pole P₁) through the first half ofthe scanning operation, and from the other side (pole P₂) during theother half of the scanning operation, for example, a dipole illuminationis achieved in which the particular point on the mask is symmetricallyilluminated from both sides after completion of the scanning operation.

This is illustrated in FIG. 6 which shows, in its top half, some rowsR₁, R₂, . . . of the mirror array 40 in which the mirror elements M_(ij)are tilted such that the reflected light passes through pole P₁. On theleft of FIG. 6 the pupil plane 60 is schematically illustrated. In thebottom portion of FIG. 6, it is assumed that the mirror elements M_(ij)of other rows R_(i) are tilted such that the reflected light bundles allpass through the pole P₂.

Since the mirror array 40 is imaged by the objective 52 on the mask 16,the grid shown in FIG. 6 may also be considered to represent the imageof the mirror array 40 in the image plane 54. Thus all points on themask 16 positioned in the upper half of this grid are illuminated fromone side (pole P₁) and all points positioned in the other half of thegrid are illuminated from the opposite side (pole P₂) at a particulartime during the scanning operation. If a point on the mask 16 movesthrough the illuminated field along the scanning direction Y, which isrepresented in FIG. 6 by an arrow 70, it is then first only illuminatedby light which has passed through pole P₁, and then it is onlyilluminated by light which has passed through pole P₂. After completionof the scanning operation, the particular point on the mask 16 has beenilluminated from both sides (poles P₁ and P₂), as it is indicated on theleft below the “=” symbol.

From this description it becomes clear that the illumination system 12makes it possible to vary almost continuously not only the totalintensity, but also the total angular distribution of the light whichany particular point on the mask 16 will receive after completion of ascanning operation. For example, if it is desired to illuminate the maskmore from one side (pole P₁) than from the opposite side (pole P₂), thenone or more of the rows R_(i) of mirror elements M_(ij) extending alongthe X direction may simply be switched to an off-state, in which thereflected light does not pass through the pupil plane 60 at all.Alternatively, the tilting angles of these mirror elements may bechanged such that the reflected light passes not through the pole P₁,but also through the pole P₂.

It is even possible to obtain at different locations on the mask 16different intensities and different angular distributions. In this casecolumns C_(j) of the mirror elements M_(ij) extending along the Ydirection are controlled by the control unit 46 such that a differenttotal intensity and/or a different angular distribution is obtained forall points on the mask which are illuminated by this column C_(j) ofmirror elements M_(ij).

For example, individual mirror elements M_(ij) of this column may bebrought into an off-state, or other areas in the pupil plane 60 may beilluminated by one or more of the mirror elements M_(ij) of this column.It may even be considered to continuously or suddenly change the tiltingangles of mirror elements contained in a particular column C_(j) so thatpoints on the mask 16 illuminated by this particular column receive adifferent angular distribution.

From the foregoing it should also have become clear that it is possibleto obtain almost any arbitrary angular distribution of the projectionlight on the mask 16. FIG. 7 shows, in a representation similar to FIG.6, a configuration of the mirror elements M_(ij) that are tilted suchthat an annular illumination setting is accomplished. More specifically,each row R_(i) of the mirror array 40 reflects the impinging light suchthat it passes through a particular area in the pupil plane 60 which isindicated on the left-hand side by P_(i). The areas P_(i), which maypartially overlap, combine so as to form an approximately annularpattern P_(a), as it is shown in the lower left corner of FIG. 7 belowthe “=” symbol.

If a point on the mask 16 is illuminated consecutively by the mirrorelements of a particular column C_(j), it will subsequently be exposedto projection light which impinges obliquely, but from different solidangles, on the point during the scanning operation. After the scanningoperation is completed, the point will have been exposed to projectionlight from all directions which are associated with the annular areaP_(a) as shown in the left bottom portion of FIG. 7.

Again, the angular distribution may be modified by tilting individualmirrors M_(ij) of the mirror array 40. Apart from this, it is possibleto accomplish an annular illumination setting for points on the maskilluminated by one or more columns C_(j) in the manner described aboveand to accomplish a different illumination setting, for example a dipoleor quadrupole illumination setting, for other points on the mask whichare illuminated by mirror elements M_(ij) of different columns C_(j′).

The possibility to illuminate different points on the mask 16 withdifferent angular distributions may be used to improve the imaging ofdifferent structures on the mask 16. Another application is thecompensation of field dependent disturbances of the angular distributionproduced by other components of the illumination system 12. In thelatter case the goal is to achieve the same angular distribution for allpoints on the mask 16 although certain optical components may have anadverse effect on this homogeneity.

3. Alternative Embodiments

It should be well understood that various alternative embodiments arepresently contemplated that are still within the scope of the presentdisclosure.

3.1 Scheimpflug Arrangement

FIG. 8 shows an exemplary alternative embodiment in a still furthersimplified representation similar to FIG. 2. In FIG. 8 componentscorresponding to those shown in FIG. 2 are denoted by the same referencenumerals augmented by 100; most of these components will not beexplained in detail again.

In the exemplary embodiment shown in FIG. 8 the object plane 150 and theimage plane 154 of the objective 152 are not parallel, but inclined toeach other. For forming a sharp image of the inclined object plane 150on the image plane 154, it is desirable to arrange the objective 152such that its optical axis OA forms an angle both with the normal on theobject plane 150 and the normal on the image plane 154.

Such a configuration is in accordance with what is usually referred toas Scheimpflug condition. This condition involves the object plane andan object side principal plane of the objective indicated by H_(o) inFIG. 8 being at least approximately intersect along a straight line. Thesame should apply to an image side principal plane H_(i) and the imageplane 154. If the Scheimpflug condition prevails, the inclined objectplane 150 is sharply imaged on the image plane 154. The image of themirror array 140 will be distorted in the image plane 154, but thisdistortion does not have a detrimental effect on either the intensity orthe angular distribution of the light impinging on the mask 16.

The fulfillment of the Scheimpflug condition has the advantage that theangle between the object plane 50, in which the mirror array 40 isarranged, and the optical axis of the condenser lens 36 becomes smaller.This reduces distortions of the illumination of the mirror array 40 bythe collimated beam 38.

3.2 Gaps Between Mirror Elements

If the mirror elements M_(ij) are arranged exactly in the object plane50 of the objective 52, inevitable gaps between adjacent mirror elementsM_(ij) will be sharply imaged on the mask 16. This is illustrated in theschematic meridional section of FIG. 9 which shows two light bundles B₂and B₃ that are reflected from mirror elements M₂ and M₃, respectively,and impinge on the mask 16. As can be clearly seen in FIG. 9, the gapbetween the adjacent mirror elements M₂, M₃ is imaged on the mask 16 at72. The width of the gap image depends on the magnification of theobjective 52.

If such gaps 72 extend perpendicularly to the scan direction Y, they areof little concern because of the integrating effect achieved with thescanning operation. However, gaps 72 extending parallel to the scandirection Y (here referred to as Y-gaps) may result in an inhomogeneousillumination of the mask 16, which will finally translate into undesiredstructure size variations on the wafer 24.

One solution for this problem is to ensure that the Y-gaps do not lineup along the scan direction Y, but are more or less evenly distributedover the illuminated field along the X direction.

If the Y-gaps are not evenly distributed along the X direction, therewill be a plurality of stripes extending along the Y direction andreceiving less light energy in the absence of other compensationmeasures. However, upon application of suitable compensation measures, ahomogenous energy distribution during the scan operation maynevertheless be accomplished. Such compensation measures may involve,for example, the reduction of the intensity in the remaining areasbetween these stripes. To this end individual mirror elements M_(ij) maybe brought into an off-state.

Another approach to reduce the intensity in the remaining areas betweenthe stripes is to arrange a special field stop in the object plane 50,the image plane 54 or an intermediate image plane. FIG. 10 shows, in asimplified top view, a suitable field stop device 74 which includes aplurality of adjacent blades 76 which can be moved along the Y directionwith the help of actuators 78. The short edges 80 of the blades 76determine the size of the illuminated field along the Y direction. Theseshort edges 80 combine to form the two long sides of the rectangularslit. At positions where the short edges 80 are retracted, these longsides have indentations. The indentations, where the distances betweenopposite blades 76 are larger, correspond to positions where Y-gapimages are. This ensures the desired compensation.

Another approach to avoid dark stripes extending along the scandirection Y is to arrange the mirror elements M_(ij) slightly outsidethe object plane 50. This exploits the face that the light bundlesreflected from the mirror elements M_(ij) have at least a smalldivergence. For example, if the mirror elements M_(ij) are arrangedbehind the object plane 50, it seems as if the reflected light wouldemerge from a completely bright object plane 50. If the mirror elementsM_(ij) are arranged in front of the object plane 50, the diverging lightbeams overlap in the object plane 50 such that the latter is completelyilluminated.

The latter case is illustrated in FIG. 11 which shows two mirrorelements M₁, M₂ in a cross section. It is, for the sake of simplicity,assumed that reflecting surfaces 821, 822 are (at least approximately)arranged in a plane 83 which is separated from the object plane 50 ofthe objective 52 by a distance A_(min). The width of the gap between thetwo adjacent mirror elements M₁, M₂ is denoted by D.

A reflected diverging light bundle is illustrated in FIG. 11 by a cone84. If the mirror elements M₁, M₂ are tilted, as it is indicated for themirror element M₂ by broken lines, the reflected light bundle 84 changesits direction but will still, due to the limited maximum tilting angles,remain within a cone or solid angle 85 having an aperture angle α. Thuslight rays emerging from a point 86 on the mirror surface 822 may passalong any line within the cone 85.

In the centre of FIG. 11 two cones 851, 852 are indicated that areassociated with two points 861, 862 on the adjacent edges of the mirrorelements M₁ and M₂, respectively. At the minimum distance A_(min) fromthe plane 83 light rays emerging from the points 861, 862 may intersectso that there is no area in the object plane 50 in the vicinity of thegap that is not illuminated. Optionally, the distance A between theobject plane 50 and the plane 83 of the mirror surfaces 821, 822 shouldexceed A_(min) so as to ensure that for all tilting angles the objectplane 50 is completely illuminated by the diverging bundles 84.

For small cone angles α the minimum distance A_(min) may be determinedfrom the width D of the gap and the angle α by

A _(min) >D/α.

On the other hand, the distance between the plane 83 of the reflectingsurfaces 821, 822 and the object plane 50 should not be exceedinglylarge. If the mirror array 40 is positioned too far away from the objectplane 50, the directions of the reflected light bundles are not properlytransformed into the desired angular distribution on the mask 16.

A useful upper limit for the distance A may be that light bundlesemerging from a single mirror element M_(ij) do not intersect in theobject plane 50. This is illustrated in FIG. 12, which shows two mirrorelements M₁′ and M₂′ of width L. The aperture angle of the light bundlesemerging from points 821 a′, 821 b′ on opposite edges of the mirrorelement M₁′ is denoted by δ. At a distance A_(max) the light bundles 884a′, 884 b′ intersect. The distance A_(max) may be determined from thewidth L and the aperture angle δ by

A _(max) <L/δ.

3.3 Field Stop

In the exemplary embodiment shown in FIGS. 1 to 7 it has been assumedthat the illuminated field 14 on the mask 16 has approximately the shapeof a ring segment. Such a geometry may be achieved, for example, by afield defining optical element 34 which is configured as a suitablediffractive optical element. However, it is difficult to achieve sharpedges in the far field. In the illuminated field 14, at least the edgesextending along the scan direction Y usually have to be sharp.

For achieving sharp edges at least along the scan direction Y, fieldstop elements 94, 96 (see FIGS. 2 and 3) may be used that cover thoseportions of the mirror array 40 which shall not be imaged on the mask16. If also the edges extending perpendicularly to the scan direction Yshall be imaged sharply on the mask 16, additional field stop elementsmay be provided. In FIG. 3 such an additional field stop element isindicated in broken lines and denoted by 98. Also a more complex fieldstop device 74 as shown in FIG. 10 may be positioned in the object plane50 of the objective 52. This particularly holds true if the mirror array40 is positioned at a distance A from the object plane 50 as has beenexplained above with reference to FIGS. 11 and 12.

FIG. 13 shows, in a meridional section similar to FIG. 2, an exemplaryalternative embodiment of an illumination system. Componentscorresponding to those shown in FIG. 2 are denoted by the same referencenumerals augmented by 300; most of these components will not beexplained again.

In the illumination system 312 the objective 352 has an intermediateimage plane 391 in which a field stop 374 is arranged. The field stop374 may be of the adjustable type as has been explained above withreference to FIG. 10. The additional intermediate image plane 391provides more freedom to install in the illumination system 312 alsobulkier field stop devices.

3.4 Transparent Deflecting Elements

FIG. 14 shows, in a meridional section similar to FIG. 2, anotherexemplary alternative embodiment of an illumination system. Componentscorresponding to those shown in FIG. 2 are denoted by the same referencenumerals augmented by 400; most of these components will not beexplained again.

The illumination system 412 differs from the illumination system 12shown in FIG. 2 mainly in two respects:

Firstly, the mirror array 40 is replaced by a refractive array 440including a plurality of transparent refractive elements T_(ij). Theserefractive elements T_(ij) may be configured as electro-optical oracousto-optical elements, for example. In such elements the refractiveindex can be varied by exposing a suitable material to ultrasonic wavesor electric fields, respectively. These effects can be exploited toproduce index gratings that deflect impinging light to variousdirections. The directions can be altered in response to a suitablecontrol signal.

3.5 Additional Pupil Defining Element

Another difference is that the field defining optical element 434 doesnot directly illuminate the refractive array 440, but through a pupildefining optical element 493 which is positioned in a plane 450′ beingoptically conjugate with the object plane 450 via an objective 499. Thepupil defining optical element 493, which may be configured as anoptical raster element such as a microlens array or a diffractiveoptical element, produces an angular distribution which is imaged on therefractive array 440 via the objective 499. As a result, the directionof the light rays emerging from the refractive elements T_(ij) does notonly depend on the deflection angle produced by the individualrefractive elements T_(ij), but also by the angular distributionproduced by the pupil defining element 493. The pupil defining elementmay include zones associated with individual refractive elements T_(ij)wherein the zones produce different far field intensity distributions.This may be used to impart a common or different fixed offset angles oncertain transmission elements T_(ij), for example. Such an offset anglemay be particularly useful if mirror elements are used instead ofrefractive elements T_(ij).

The intensity distribution in the pupil plane 460 of the objective 452may then be described as a convolution of the far field intensitydistributions produced by the pupil defining element 493 and the farfield intensity distribution produced by the refractive array 440.

This is illustrated in FIG. 15 which shows in its upper portion anexemplary far field intensity distribution D_(PDE) produced by the pupildefining element 493. Here it is assumed that this far field intensitydistribution has the shape of a regular hexagon. The central portion ofFIG. 15 illustrates an exemplary far field intensity distribution D_(RA)produced by the refractive array 440. The latter is assembled by aplurality of individual far field intensity distributions D_(ij),wherein each individual far field intensity distributions D_(ij) isproduced by a single refractive element T_(ij). These individual farfield intensity distributions D_(ij) are small spots.

The convolution, which is denoted in FIG. 15 by the symbol CONV, ofthese two far field intensity distributions D_(PDE) and D_(RA) resultsin a far field intensity distribution D_(tot) in which a plurality ofhexagonal distributions D_(PDE) are assembled according to the pointdistribution D_(RA). In this exemplary case, this results in twoopposite poles P₁′, P₂′ illuminated in the pupil plane 460. Since thehexagons may be assembled such that no gaps remain in between, the polesP₁′, P₂′ are more or less continuously illuminated. By changing thedeflection angles produced by the refractive elements T_(ij), it ispossible to assemble the hexagonal far field intensity distributionsD_(PDE) to other geometries, for example poles of different shapes,arranged at different locations, or having different total intensities.

An additional pupil defining element may also be used, as a matter ofcourse, in connection with mirror arrays. Apart from that, the pupildefining element may also be arranged in another field plane. Forexample, in the exemplary embodiment shown in FIG. 13 the intermediatefield plane 391 would be ideally suited for this purpose. Apart fromthat, it is also possible to provide transparent reflective orrefractive elements with diffractive structures that produce the sameeffect than the pupil defining optical raster element 494.

The above description of embodiments has been given by way of example.From the disclosure given, those skilled in the art will not onlyunderstand the present disclosure and its attendant advantages, but willalso find apparent various changes and modifications to the structuresand methods disclosed. The applicant seeks, therefore, to cover all suchchanges and modifications as fall within the spirit and scope of thedisclosure, as defined by the appended claims, and equivalents thereof.

1-27. (canceled)
 28. A system having an object plane and an image plane,the system comprising: a beam deflection array comprising beamdeflection elements, wherein: the beam deflection elements areindividually controllable; the beam deflection elements are arranged inor in close proximity to the object plane of the system; and the systemis an illumination system configured so that, during use of the systemin a scanning microlithographic projection exposure apparatus: a mask ispresent in the image plane of the system; and light emerging from apoint in the object plane of the system converges to a conjugated pointin the image plane of the system.
 29. The system of claim 28, furthercomprising a raster element in a plane so that, during use of the systemin the scanning microlithographic projection exposure apparatus, lightemerging from a point in the plane in which the raster element isarranged converges to a conjugated point in the image plane of thesystem.
 30. The system of claim 29, wherein the raster element comprisesa microlens array.
 31. The system of claim 29, wherein the rasterelement comprises a diffractive optical element.
 32. The system of claim28, wherein: each beam deflection element has a first state and a secondstate; and during use of the system in the scanning microlithographicprojection exposure apparatus, a light beam deflected from the beamdeflection array: passes a pupil plane of the system when the beamdeflection elements are in their first state; and does not pass thepupil plane when the beam deflection elements are in their second state.33. The system of claim 28, further comprising a field stop.
 34. Thesystem of claim 33, wherein the field stop is arranged in anintermediate image plane of the system that is optically conjugated tothe object plane of the system.
 35. The system of claim 34, wherein: astop edge of the field stop comprises a plurality of blades; and atleast one of the following holds: a shape of at least some of the bladesis adjustable via an actuator; and a position of at least some of theblades is adjustable via an actuator.
 36. The system of claim 28,wherein the beam deflection elements are arranged in a staggered mannerso that, during use of the system in the scanning microlithographicprojection exposure apparatus, at least one beam deflection element isilluminated on each line which extends parallel to a scan direction ofthe scanning microlithographic projection exposure apparatus betweenopposite ends of the beam deflection array.
 37. The system of claim 28,wherein at least one of the following hold: a) the beam deflectionelements are arranged at a distance A with |A|>A_(min) from the objectplane of they system, and the distance A_(min) is a shortest distancefrom the object plane of the system at which a usable field in theobject plane of the system is completely illuminated by the beamdeflection elements during use of the system in the scanningmicrolithographic projection exposure apparatus; and b) the beamdeflection elements are arranged at a distance A<A_(max) from the objectplane of the system, and the distance A_(max) is a shortest distancefrom the object plane of the system at which two light bundles emergingfrom opposite edges of a beam deflection element intersect during use ofthe system in the scanning microlithographic projection exposureapparatus.
 38. The system of claim 28, wherein the beam deflectionelements comprise transparent elements configured so that, during use ofthe system in the scanning microlithographic projection exposureapparatus, the transparent elements deflect light rays passing throughthe transparent elements.
 39. The system of claim 28, wherein the beamdeflection elements comprise mirrors that are tiltable relative to theobject plane of the system.
 40. The system of claim 39, wherein themirrors are tiltable about two tilt axes which define an angletherebetween.
 41. The system of claim 28, wherein the object plane ofthe system and the image plane of the system are inclined relative toeach other.
 42. The system of claim 41, further comprising an objective,wherein: the object plane of the system and an object side principalplane of the objective at least substantially intersect along a firststraight line; and the image plane of the system and an image sideprincipal plane of the objective at least substantially intersect alonga second straight line.
 43. A system having an object plane and an imageplane, the system comprising: a beam deflection array comprising beamdeflection elements; and a raster element, wherein: the beam deflectionelements are individually controllable; the beam deflection elements arearranged in or in close proximity to the object plane of the system; andthe system is an illumination system configured so that, during use ofthe system in a scanning microlithographic projection exposureapparatus: a mask is present in the image plane of the system; lightemerging from a point in a plane in which the raster element is arrangedconverges to a conjugated point in the image plane of system; and lightemerging from a point in the object plane of the system converges to aconjugated point in the image plane of the system.
 44. The system ofclaim 43, wherein the raster element comprises an array of microlenses.45. The system of claim 43, wherein: each beam deflection element has afirst state and a second state; and during use of the system in thescanning microlithographic projection exposure apparatus, a light beamdeflected from the beam deflection array: passes a pupil plane of thesystem when the beam deflection elements are in their first state; anddoes not pass the pupil plane when the beam deflection elements are intheir second state.
 46. A system, comprising: a beam deflection arraycomprising beam deflection elements, wherein: the beam deflectionelements are individually controllable; and the system is anillumination system configured so that, during use of the system in ascanning microlithographic projection exposure apparatus: the beamdeflection elements are arranged in a staggered manner so that at leastone beam deflection element is illuminated on each line which extendsparallel to a scan direction of the scanning microlithographicprojection exposure apparatus between opposite ends of the beamdeflection array; the system illuminates a mask which is distinct fromthe beam deflection array.
 47. The system of claim 46, wherein: thesystem has an object plane and an image plane; and during use of theillumination system in the scanning microlithographic projectionexposure apparatus: the mask is in the image plane of the system; lightemerging from a point in the object plane of the system converges to aconjugated point in the image plane of the system; and the beamdeflection elements are arranged in or in close proximity to an objectplane of the system.